Quantum Yield of an Avalanche Silicon Photodiode in the 114–170 and 210–1100 nm Wavelength Ranges.

Authors :: Aruev, P. N.
Belik, V. P.
Blokhin, A. A.
Zabrodskii, V. V.
Nikolaev, A. V.
Sakharov, V. I.
Serenkov, I. T.
Filimonov, V. V.
Sherstnev, E. V.
Source :: Technical Physics Letters; Dec2023, Vol. 49 Issue 12, p195-198, 4p
Publication Year :: 2023
Abstract: An avalanche silicon photodiode has been developed for the near IR, visible, UV and VUV light ranges. The external quantum efficiency has been studied in the 114–170 and 210–1100 nm ranges. It has been demonstrated that the avalanche photodiode reaches the quantum yield of 29 to 9300 electrons/photon at the 160 nm wavelength and bias voltage of 190–303 V, respectively. [ABSTRACT FROM AUTHOR]

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