FeSi and CrSi2 Thin Films as Transparent Conductive Layers for VIS/SWIR Sensitive Mg2Si Films Grown on Si.

Mg₂Si film 350–600 nm thick was formed on Si(111) substrate by ultrafast reactive deposition of Mg. Then 10–15 nm thick films of FeSi or CrSi₂ were grown as cover layers on Mg₂Si by codeposition of Fe/Si or Cr/Si. In comparison with bare Mg₂Si/Si film, the measured transparency losses in 0.1–1.1 eV range are ∼17–25 and 10–35% for the samples with the FeSi and CrSi₂ layers, respectively. The measured at room temperature resistivity is ∼0.24 mΩ cm for FeSi and 1.7 mΩ cm for CrSi₂. The photoresponse of structures FeSi/Mg₂Si/Si and CrSi₂/Mg₂Si/Si illuminated with the light filtered by a silicon plate demonstrate the spectral sensitivity in the range 980–1200 nm and peak intensity ∼255 and ∼620 μA/W respectively. [ABSTRACT FROM AUTHOR]