Exploring Multi‐Bit Logic In‐Memory with Memristive HfO2‐Based Ferroelectric Tunnel Junctions.

MLA

Kho, Wonwoo, et al. “Exploring Multi‐Bit Logic In‐Memory with Memristive HfO2‐Based Ferroelectric Tunnel Junctions.” Advanced Electronic Materials, vol. 10, no. 3, Mar. 2024, pp. 1–9. EBSCOhost, https://doi.org/10.1002/aelm.202300618.

APA

Kho, W., Hwang, H., & Ahn, S. (2024). Exploring Multi‐Bit Logic In‐Memory with Memristive HfO2‐Based Ferroelectric Tunnel Junctions. Advanced Electronic Materials, 10(3), 1–9. https://doi.org/10.1002/aelm.202300618

Chicago

Kho, Wonwoo, Hyunjoo Hwang, and Seung‐Eon Ahn. 2024. “Exploring Multi‐Bit Logic In‐Memory with Memristive HfO2‐Based Ferroelectric Tunnel Junctions.” Advanced Electronic Materials 10 (3): 1–9. doi:10.1002/aelm.202300618.