Back to Search Start Over

Cone array formation on Si surfaces by low-energy He plasma irradiation with magnetron sputtering pre-deposited Ta.

Authors :
Liu, Zhe
Li, Long
Gao, Zeshi
Chen, Ze
Yin, Chao
Mao, Shifeng
Kajita, Shin
Ohno, Noriyasu
Ye, Minyou
Source :
Journal of Applied Physics; 3/7/2024, Vol. 135 Issue 9, p1-7, 7p
Publication Year :
2024

Abstract

Low-energy ion beam irradiation, combined with the introduction of impurities, presents a promising approach for nanopatterning silicon (Si) surfaces. In this research, we investigate the surface evolution of Si (100) surfaces irradiated by 75 eV helium (He) plasma, in the presence of tantalum (Ta), traditionally regarded as an impurity incapable of initiating pattern formation, as evidenced in prior studies. The Ta impurities are pre-deposited onto the Si surfaces using the magnetron sputtering method, which offers a more controlled and quantifiable approach compared with the conventional co-deposition route. After irradiation at 800 K, dense cone arrays are produced on the Si surface. The growth of the cones is explored for fluence spanning (1–10) × 10<superscript>25</superscript> m<superscript>−2</superscript>. The cross-sectional scanning electron microscope images indicate that the cone lengths and base width are well characterized by t<superscript>1/2</superscript> dependence. The kinetics of the cone growth follow Fick's law, characterized by an effective diffusive mechanism with the coefficients of diffusion: D = 6.49 ± 0.83 × 10<superscript>−16</superscript> m<superscript>−2</superscript> s<superscript>−1</superscript>. Transmission electron microscope observations reveal that the cone has distinct inner and outer parts with different microstructures and a clear interface. The growth mechanism of these cones is elucidated as a composite process involving preferential sputtering, the destabilizing influence of He bubbles, and the migration of adatoms. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
135
Issue :
9
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
175915478
Full Text :
https://doi.org/10.1063/5.0187265