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Effects of vacancy and external electric field on the electronic properties of the MoSi2N4/graphene heterostructure.
- Source :
- Chinese Physics B; Mar2024, Vol. 33 Issue 3, p1-9, 9p
- Publication Year :
- 2024
-
Abstract
- Recently, the newly synthesized septuple-atomic layer two-dimensional (2D) material MoSi<subscript>2</subscript>N<subscript>4</subscript> (MSN) has attracted attention worldwide. Our work delves into the effect of vacancies and external electric fields on the electronic properties of the MSN/graphene (Gr) heterostructure using first-principles calculation. We find that four types of defective structures, N-in, N-out, Si and Mo vacancy defects of monolayer MSN and MSN/Gr heterostructure are stable in air. Moreover, vacancy defects can effectively modulate the charge transfer at the interface of the MSN/Gr heterostructure as well as the work function of the pristine monolayer MSN and MSN/Gr heterostructure. Finally, the application of an external electric field enables the dynamic switching between n-type and p-type Schottky contacts. Our work may offer the possibility of exceeding the capabilities of conventional Schottky diodes based on MSN/Gr heterostructures. [ABSTRACT FROM AUTHOR]
- Subjects :
- ELECTRIC fields
SCHOTTKY barrier diodes
CHARGE transfer
HETEROSTRUCTURES
Subjects
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 33
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 175726175
- Full Text :
- https://doi.org/10.1088/1674-1056/acef04