Mitigating WL-to-WL Disturbance in Dynamic Random-Access Memory (DRAM) through Adopted Spherical Shallow Trench Isolation with Silicon Nitride Layer in the Buried Channel Array Transistor (BCAT).

The Pass Gate Effect (PGE), often referred to as adjacent cell interference, presents a significant challenge in dynamic random-access memory (DRAM). In this study, we investigate the impact of PGE and propose innovative solutions to address this issue in DRAM technology, employing 10 nm node technology with buried channel array transistors. To evaluate the efficacy of our proposals, we utilized SILVACO for simulating various DRAM configurations. Our approach centers on two key structural optimizations: the introduction of a spherical Shallow Trench Isolation (STI) and the incorporation of a silicon nitride (Si₃N₄) layer within the spherical STI structure. These optimizations were meticulously designed to mitigate the PGE by considering several factors that are highly influential in its manifestation. To validate our approach, we conducted comprehensive simulations, comparing the PGE factors of typical DRAM structures with those of our proposed configurations. The results of our analysis strongly support the effectiveness of our proposed structural enhancements in alleviating the PGE when contrasted with conventional DRAM structures. Remarkably, our optimizations achieved a remarkable 82.4% reduction in the PGE, marking a significant breakthrough in the field of DRAM technology. By addressing the PGE challenge and substantially reducing its impact, our research contributes to the advancement of DRAM technology, offering practical solutions to enhance data integrity and reliability in the era of 10 nm node DRAM. [ABSTRACT FROM AUTHOR]