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Transparent Structures for ZnO Thin Film Paper Transistors Fabricated by Pulsed Electron Beam Deposition.
- Source :
- Micromachines; Feb2024, Vol. 15 Issue 2, p265, 15p
- Publication Year :
- 2024
-
Abstract
- Thin film transistors on paper are increasingly in demand for emerging applications, such as flexible displays and sensors for wearable and disposable devices, making paper a promising substrate for green electronics and the circular economy. ZnO self-assembled thin film transistors on a paper substrate, also using paper as a gate dielectric, were fabricated by pulsed electron beam deposition (PED) at room temperature. These self-assembled ZnO thin film transistor source–channel–drain structures were obtained in a single deposition process using 200 and 300 µm metal wires as obstacles in the path of the ablation plasma. These transistors exhibited a memory effect, with two distinct states, "on" and "off", and with a field-effect mobility of about 25 cm<superscript>2</superscript>/Vs in both states. For the "on" state, a threshold voltage (V<subscript>th on</subscript> = −1.75 V) and subthreshold swing (S = 1.1 V/decade) were determined, while, in the "off" state, V<subscript>th off</subscript> = +1.8 V and S = 1.34 V/decade were obtained. A 1.6 μA maximum drain current was obtained in the "off" state, and 11.5 μA was obtained in the "on" state of the transistor. Due to ZnO's non-toxicity, such self-assembled transistors are promising as components for flexible, disposable smart labels and other various green paper-based electronics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 2072666X
- Volume :
- 15
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- 175651266
- Full Text :
- https://doi.org/10.3390/mi15020265