Boosting the responsivity of amorphous-Ga2O3 solar-blind photodetector via organosilicon surface passivation.

In this paper, an amorphous Ga₂O₃ metal–semiconductor–metal photodetectors passivated by the organosilicon layer were reported. Due to the excellent passivation property of the passivation layer and the diffusion effect of hydrogen, the responsivity of Ga₂O₃ photodetectors was improved effectively, while the dark state current is basically unchanged. The results of x-ray photoelectron spectroscopy have proved that the amount of oxygen vacancy near the interface between organosilicon and Ga₂O₃ layer has been passivated and the surface chemisorption was suppressed via capping a foreign layer after the deposition of organosilicon passivation layer. The Ga₂O₃ photodetectors with organosilicon passivation layer exhibit a boosted performance, with a low dark current of 2.96 × 10⁻¹² A, a responsivity of 11.82 A/W, and a specific detectivity of 9.01 × 10¹⁴ Jones. [ABSTRACT FROM AUTHOR]