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Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS2/Janus MoSSe van der Waals heterostructure.
- Source :
- Nanoscale Advances; 2/21/2024, Vol. 6 Issue 4, p1193-1201, 9p
- Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 25160230
- Volume :
- 6
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Nanoscale Advances
- Publication Type :
- Academic Journal
- Accession number :
- 175582222
- Full Text :
- https://doi.org/10.1039/d3na00852e