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A Novel Multiscale Residual Aggregation Network-Based Image Super-Resolution Algorithm for Semiconductor Defect Inspection.

Authors :
Liu, Yang
Hu, Lilei
Sun, Bin
Ma, Can
Shen, Jingxuan
Chen, Chang
Source :
IEEE Transactions on Semiconductor Manufacturing; Feb2024, Vol. 37 Issue 1, p93-102, 10p
Publication Year :
2024

Abstract

Single-image super-resolution (SISR) techniques have found wide applications in semiconductor defect inspection. Enhancing image resolution to improve inspection sensitivity and accuracy holds great significance. A novel SISR algorithm, called cross-convolutional residual network (CCRN), is proposed in this study. CCRN comprises a cross-convolutional module (CCM), which incorporates a cross-sharing mechanism that facilitates the fusion of features from different stages, enabling the extraction of more information from the image. Moreover, a global residual aggregation structure (GRA) is introduced. GRA captures and transfers different levels of residual features acquired from learning each CCM to the reconstruction layer. Experimental results demonstrate that the proposed SR algorithm outperforms existing state-of-the-art SR algorithms in terms of both visual and quantitative metrics when applied to optical, SEM, and TEM images of microfluidic chips, CMOS image sensors, and quantum dots, respectively. Additionally, CCRN significantly improves the accuracy of defect classification and inspection of unpatterned wafers, as evaluated using the WM-811K dataset. Notably, an increase in local defection testing accuracy from 79.00% to 89.00% and an improvement in classification accuracy from 93.69% to 96.06% are achieved. These findings underscore the potential applications of the proposed algorithm in improving semiconductor defect inspection and classification accuracies. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
08946507
Volume :
37
Issue :
1
Database :
Complementary Index
Journal :
IEEE Transactions on Semiconductor Manufacturing
Publication Type :
Academic Journal
Accession number :
175370950
Full Text :
https://doi.org/10.1109/TSM.2023.3327767