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二维GaN 中带电缺陷性质的第一性原理研究.

Authors :
罗子江
毛淇
陈志涛
李改
刘雪飞
王继红
Source :
Journal of Atomic & Molecular Physics (1000-0364); Aug2025, Vol. 42 Issue 4, p1-9, 9p
Publication Year :
2025

Abstract

<i>Copyright of Journal of Atomic & Molecular Physics (1000-0364) is the property of Journal of Atomic & Molecular Physics Editorial Office and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)

Details

Language :
Chinese
ISSN :
10000364
Volume :
42
Issue :
4
Database :
Complementary Index
Journal :
Journal of Atomic & Molecular Physics (1000-0364)
Publication Type :
Academic Journal
Accession number :
175311052
Full Text :
https://doi.org/10.19855/j.1000-2025.046004