Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study.

MLA

Kang, Woo-Seok, et al. “Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study.” Micromachines, vol. 15, no. 1, Jan. 2024, p. 57. EBSCOhost, https://doi.org/10.3390/mi15010057.

APA

Kang, W.-S., Choi, J.-H., Kim, D., Kim, J.-H., Lee, J.-H., Min, B.-G., Kang, D. M., Choi, J. H., & Kim, H.-S. (2024). Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study. Micromachines, 15(1), 57. https://doi.org/10.3390/mi15010057

Chicago

Kang, Woo-Seok, Jun-Hyeok Choi, Dohyung Kim, Ji-Hun Kim, Jun-Ho Lee, Byoung-Gue Min, Dong Min Kang, Jung Han Choi, and Hyun-Seok Kim. 2024. “Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study.” Micromachines 15 (1): 57. doi:10.3390/mi15010057.