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Structural, dielectric, and optical properties in Mn-modified CaSnO3.
- Source :
- Ferroelectrics; 2024, Vol. 618 Issue 2, p334-346, 13p
- Publication Year :
- 2024
-
Abstract
- The CaSn<subscript>0.95</subscript>Mn<subscript>0.05</subscript>O<subscript>3</subscript> (CSMO) was produced by using the sol-gel wet chemical process. The structural composition was examined using an X-ray diffraction (XRD) pattern, and the presence of an orthorhombic structure with the space group Pbnm was confirmed by Rietveld refinement. At different temperatures between 300 K and 773 K, the dielectric permittivity (ε), tangent losses (tanδ), and electrical conductivity of CSMO has been measured as a function of frequency from 100 Hz to 1 MHz.Dielectric permittivity (ε) is found to be independent of temperature up to 400K and very low tangent loss. Jonscher's power law in the material's frequency-dependent ac conductivity shows its semiconductor nature. Optical band gap of CSMO was observed by using UV-vis.absorption spectra. The optical band gap of CSMO, which was determined using Tauc plot measurements to be 2.42 eV, suggests that the sample is a semiconductor. The Arrhenius model is employed to perform an analysis of the dc conductivity of the material concerning both frequency and temperature. As a result of its semiconductivity, stable dielectric constant, and low tangent loss, CSMO is a suitable material for thermally stable capacitors, semiconductor devices, UV filter and UV detectors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00150193
- Volume :
- 618
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Ferroelectrics
- Publication Type :
- Academic Journal
- Accession number :
- 175069590
- Full Text :
- https://doi.org/10.1080/00150193.2023.2273710