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Effect of Carbon-Doped Cu(Ni) Alloy Film for Barrierless Copper Interconnect.
- Source :
- Coatings (2079-6412); Jan2024, Vol. 14 Issue 1, p68, 10p
- Publication Year :
- 2024
-
Abstract
- In this study, the barrier properties and diffusion behavior of carbon-doped Cu(Ni) alloy film were investigated. The films were fabricated using magnetron sputtering on a barrierless silicon substrate. X-ray diffraction patterns and electric resistivity results demonstrated that the barrierless Cu(NiC) alloy films remained thermally stable up to 650 °C. Transmission electron microscopy images provided the presence of a self-formed diffusion layer between the Cu(NiC) alloy and Si substrate. The effect of carbon-doped atoms on the diffusion behavior of the Cu(NiC) films was analyzed by X-ray photoemission spectroscopy depth profile. Results revealed that carbon doping can improve the barrier properties of barrierless Cu(Ni) film. Moreover, X-ray photoemission spectroscopy was performed to examine the chemical states of the self-formed layer at the Cu(NiC)/Si interface. The self-formed diffusion layer was found to consist of Cu metal, Ni metal, Si, Cu<subscript>2</subscript>O, NiO, and SiO<subscript>2</subscript>. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20796412
- Volume :
- 14
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Coatings (2079-6412)
- Publication Type :
- Academic Journal
- Accession number :
- 175050067
- Full Text :
- https://doi.org/10.3390/coatings14010068