Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy.

Details

Language :

English

ISSN :

16744926

Volume :

45

Issue :

1

Database :

Complementary Index

Journal :

Journal of Semiconductors

Publication Type :

Academic Journal

Accession number :

174951969

Full Text :

https://doi.org/10.1088/1674-4926/45/1/012503