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Uncovering cation disorder in ternary Zn1+xGe1−x(N1−xOx)2 and its effect on the optoelectronic properties.

Authors :
Wang, Zhenyu
Többens, Daniel M.
Franz, Alexandra
Savvin, Stanislav
Breternitz, Joachim
Schorr, Susan
Source :
Journal of Materials Chemistry C; 1/21/2024, Vol. 12 Issue 3, p1124-1131, 8p
Publication Year :
2024

Abstract

Ternary nitride materials, such as ZnGeN<subscript>2</subscript>, have been considered as hopeful optoelectronic materials with an emphasis on sustainability. Their nature as ternary materials has been ground to speculation of cation order/disorder as a mechanism to tune their bandgap. We herein studied the model system Zn<subscript>1+x</subscript>Ge<subscript>1−x</subscript>(N<subscript>1−x</subscript>O<subscript>x</subscript>)<subscript>2</subscript> including oxygen – which is often a contaminant in nitride materials – using a combination of X-ray and neutron diffraction combined with elemental analyses to provide direct experimental evidence for the existence of cation swapping in this class of materials. In addition, we combine our results with UV-VIS spectroscopy to highlight the influence of disorder on the optical bandgap. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20507526
Volume :
12
Issue :
3
Database :
Complementary Index
Journal :
Journal of Materials Chemistry C
Publication Type :
Academic Journal
Accession number :
174836813
Full Text :
https://doi.org/10.1039/d3tc02650g