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Hole‐Mediated RKKY Interaction in 2D Ferromagnetic CrTe2 Ultra‐Thin Films.

Authors :
Wang, Jin
Xu, Yongkang
Wang, Shuanghai
Dai, Xingze
Yan, Pengfei
Zhou, Jian
Wang, Ruifeng
Xu, Yongbing
He, Liang
Source :
Advanced Electronic Materials; Jan2024, Vol. 10 Issue 1, p1-6, 6p
Publication Year :
2024

Abstract

The rapid development of 2D magnetic materials has opened new possibilities in the field of spintronics. CrTe2, a 2D material with perpendicular magnetic anisotropy (PMA) and ferromagnetic transient temperature near room temperature, holds promise for various applications. However, the underlying mechanism responsible for its global magnetism remains unclear. This work focuses on investigating the magneto‐transport properties of ultra‐thin CrTe2 Field Effect Transistor (FET) under the influence of top gate biases. The application of gate voltage ranging from 25 to −15 V tunes its coercivity (HC) and Curie temperature (TC) (from 152 to 191 K). Notably, a linear correlation is observed between the TC and the hole concentration (np1/3$n_{\mathrm{p}}^{1/3}$) in the CrTe2 film, indicating the involvement of the Ruderman–Kittel–Kasuya–Yosida interaction. This experimental analysis sheds light on the mechanism of the CrTe2's ferromagnetism and paves the way for future advancements and applications in this material. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
2199160X
Volume :
10
Issue :
1
Database :
Complementary Index
Journal :
Advanced Electronic Materials
Publication Type :
Academic Journal
Accession number :
174713629
Full Text :
https://doi.org/10.1002/aelm.202300646