Theoretical occurrence of quantized chemistry of conduction mechanism in layered perovskite for the application of Resistive Random Access Memory devices.

MLA

Sajid, Muhammad, et al. “Theoretical Occurrence of Quantized Chemistry of Conduction Mechanism in Layered Perovskite for the Application of Resistive Random Access Memory Devices.” International Journal of Quantum Chemistry, vol. 124, no. 1, Jan. 2024, pp. 1–12. EBSCOhost, https://doi.org/10.1002/qua.27281.

APA

Sajid, M., Ishaque, M., Imran, M., Niaz, N. A., Hussain, F., Rasheed, U., Khalil, R. M. A., Ali, S. M., Hayat, S. S., & Shoaib, M. (2024). Theoretical occurrence of quantized chemistry of conduction mechanism in layered perovskite for the application of Resistive Random Access Memory devices. International Journal of Quantum Chemistry, 124(1), 1–12. https://doi.org/10.1002/qua.27281

Chicago

Sajid, Muhammad, Maria Ishaque, Muhammad Imran, Niaz Ahmad Niaz, Fayyaz Hussain, Umbreen Rasheed, R. M. Arif Khalil, Syed Mansoor Ali, Sardar Sikandar Hayat, and Muhammad Shoaib. 2024. “Theoretical Occurrence of Quantized Chemistry of Conduction Mechanism in Layered Perovskite for the Application of Resistive Random Access Memory Devices.” International Journal of Quantum Chemistry 124 (1): 1–12. doi:10.1002/qua.27281.