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Multiresistance states in ferro- and antiferroelectric trilayer boron nitride.
- Source :
- Nature Communications; 1/6/2024, Vol. 15 Issue 1, p1-7, 7p
- Publication Year :
- 2024
-
Abstract
- Stacking two atomic layers together can induce interlayer (sliding) ferroelectricity that is absent in their naturally occurring crystal forms. With the flexibility of two-dimensional materials, more layers could be assembled to give rise to even richer polarization states. Here, we show that three-layer boron nitride can host ferro- and antiferroelectric domains in the same sample. When used as a tunneling junction, the polarization of these domains could be switched in a layer-by-layer procedure, producing multiple resistance states. Theoretical investigation reveals an important role played by the interaction between the trilayer boron nitride and graphene substrate. These findings reveal the great potential and unique properties of 2D sliding ferroelectric materials. Here, the authors use three-layer boron nitride to construct interfacial ferro- and antiferroelectric tunnel junctions and find that the polarization is flipped in a layer-by-layer way, resulting in multiresistance states. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20411723
- Volume :
- 15
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Nature Communications
- Publication Type :
- Academic Journal
- Accession number :
- 174601678
- Full Text :
- https://doi.org/10.1038/s41467-023-44617-w