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Low leakage, differential read scheme CNTFET based 9T SRAM cells for Low Power applications.
- Source :
- International Journal of Electronics; Jan2024, Vol. 111 Issue 1, p127-148, 22p
- Publication Year :
- 2024
-
Abstract
- Electronic devices are persisting as the integral part in various medical devices. These devices require SRAMs (Static Random Access Memory) with power efficient capability to handle the data, as they occupy most of the die area. Especially, wearable devices are bringing new challenges in the design of an IC, where high stability and low static power dissipation are very much required. In this paper, two new Carbon Nanotube Field Effect Transistor (CNTFET) based 9T SRAM cell topologies are presented to improve the leakage power dissipation at standby mode while maintaining the stability of the cell. Differential bitlines with decoupled read port are used to assist the read disturbance and the subthreshold lowering as well as stack of transistors are employed to curtail the leakage power. The circuits are implemented at 900 mv in Cadence using CNTFET technology. The Architecture with a 4 × 4 array matrix of the proposed 9T cells is designed. These are found to be the better ones yielding good results compared to the existing designs. [ABSTRACT FROM AUTHOR]
- Subjects :
- STATIC random access memory
CARBON nanotube field effect transistors
LEAKAGE
Subjects
Details
- Language :
- English
- ISSN :
- 00207217
- Volume :
- 111
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- International Journal of Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 174521656
- Full Text :
- https://doi.org/10.1080/00207217.2022.2148289