Improved Properties of Post-Deposition Annealed Ga 2 O 3 /SiC and Ga 2 O 3 /Al 2 O 3 /SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering.

The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga's figure of merit of Ga₂O₃ demonstrate its potential as a next-generation power semiconductor material. However, the thermal conductivity of Ga₂O₃ is lower than that of other wide-bandgap materials, resulting in the degradation of the electrical performance and reduced reliability of devices. The heterostructure formation on substrates with high thermal conductivity has been noted to facilitate heat dissipation in devices. In this work, Ga₂O₃ thin films with an Al₂O₃ interlayer were deposited on SiC substrates by radio frequency sputtering. Post-deposition annealing was performed at 900 °C for 1 h to crystallize the Ga₂O₃ thin films. The Auger electron spectroscopy depth profiles revealed the interdiffusion of the Ga and Al atoms at the Ga₂O₃/Al₂O₃ interface after annealing. The X-ray diffraction (XRD) results displayed improved crystallinity after annealing and adding the Al₂O₃ interlayer. The crystallite size increased from 5.72 to 8.09 nm as calculated by the Scherrer equation using the full width at half maximum (FWHM). The carrier mobility was enhanced from 5.31 to 28.39 cm² V⁻¹ s⁻¹ in the annealed Ga₂O₃ thin films on Al₂O₃/SiC. The transfer and output characteristics of the Ga₂O₃/SiC and Ga₂O₃/Al₂O₃/SiC back-gate transistors reflect the trend of the XRD and Hall measurement results. Therefore, this work demonstrated that the physical and electrical properties of the Ga₂O₃/SiC back-gate transistors can be improved by post-deposition annealing and the introduction of an Al₂O₃ interlayer. [ABSTRACT FROM AUTHOR]