Epitaxial Stabilization of Perovskite ATeO 3 Thin Films.

Tellurium oxides of the ATeO₃ form typically do not crystallize in perovskite structures. Here, we show that perovskite-like ATeO₃ (A = Ca, Sr, Ba) thin films can be grown on perovskite single-crystal substrates via epitaxial stabilization. These films are stable with high optical bandgaps, low dielectric losses, and a high electric breakdown strength. Hysteretic dielectric behavior found in SrTeO₃ and BaTeO₃ strongly suggests the presence of antiferroelectricity and ferroelectricity, respectively. These properties make perovskite tellurium oxides possibly appealing candidates for thin film coating or insulator materials in advanced microelectronics. Tellurium oxides constitute a largely unexplored class of materials that might show new and interesting functionalities in epitaxial thin-films. Our work encourages new work within this field. [ABSTRACT FROM AUTHOR]