Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf 0.5 Zr 0.5 O 2 Film.

MLA

Chouprik, Anastasia, et al. “Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf 0.5 Zr 0.5 O 2 Film.” Nanomaterials (2079-4991), vol. 13, no. 23, Dec. 2023, p. 3063. EBSCOhost, https://doi.org/10.3390/nano13233063.

APA

Chouprik, A., Savelyeva, E., Korostylev, E., Kondratyuk, E., Zarubin, S., Sizykh, N., Zhuk, M., Zenkevich, A., Markeev, A. M., Kondratev, O., & Yakunin, S. (2023). Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf 0.5 Zr 0.5 O 2 Film. Nanomaterials (2079-4991), 13(23), 3063. https://doi.org/10.3390/nano13233063

Chicago

Chouprik, Anastasia, Ekaterina Savelyeva, Evgeny Korostylev, Ekaterina Kondratyuk, Sergey Zarubin, Nikita Sizykh, Maksim Zhuk, et al. 2023. “Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf 0.5 Zr 0.5 O 2 Film.” Nanomaterials (2079-4991) 13 (23): 3063. doi:10.3390/nano13233063.