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Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiO 2 Bilayer Device.
- Source :
- Materials (1996-1944); Dec2023, Vol. 16 Issue 23, p7324, 12p
- Publication Year :
- 2023
-
Abstract
- This paper investigates the bipolar resistive switching and synaptic characteristics of IZO single-layer and IZO/SiO<subscript>2</subscript> bilayer two-terminal memory devices. The chemical properties and structure of the device with a SiO<subscript>2</subscript> layer are confirmed by x-ray photoemission spectroscopy (XPS) and transmission electron microscopy (TEM) imaging. The device with the SiO<subscript>2</subscript> layer showed better memory characteristics with a low current level, as well as better cell-to-cell and cycle-to-cycle uniformity. Moreover, the neuromorphic applications of the IZO/SiO<subscript>2</subscript> bilayer device are demonstrated by pulse response. Paired pulse facilitation, excitatory postsynaptic current, and pulse-width-dependent conductance changes are conducted by the coexistence of short- and long-term memory characteristics. Moreover, Hebbian rules are emulated to mimic biological synapse function. The result of potentiation, depression, spike-rate-dependent plasticity, and spike-time-dependent plasticity prove their favorable abilities for future applications in neuromorphic computing architecture. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 16
- Issue :
- 23
- Database :
- Complementary Index
- Journal :
- Materials (1996-1944)
- Publication Type :
- Academic Journal
- Accession number :
- 174112318
- Full Text :
- https://doi.org/10.3390/ma16237324