Stabilization of the tetragonal phase in ZrO2 thin films according to ozone concentration using atomic layer deposition.

In this study, we investigated the crystallographic and electrical properties of ZrO₂ thin films prepared by an ozone-based atomic layer deposition process. Cyclopentadienyl tris(dimethylamino) zirconium [CpZr(NMe₂)₃] was used as the Zr precursor, and O₃ was used as the reactant. ZrO₂ films were produced using O₃ in various concentrations from 100 to 400 g/m³. These thin films were used to fabricate metal–oxide–semiconductor capacitors, whose electrical properties were evaluated and correlated with crystallographic analysis. As the O₃ concentration increased, the tetragonal phase of the ZrO₂ film stabilized and the dielectric constant improved. However, the leakage current density characteristics concurrently deteriorated due to the high concentration of O₃, increasing the number of grain boundaries in the ZrO₂ film by increasing crystallinity. Thus, the concentration of O₃ can control the number of OH groups of the ZrO₂ film, affecting the device characteristics. [ABSTRACT FROM AUTHOR]