Photoelectron holographic evidence for the incorporation site of Se and suppressed atomic displacement of the conducting layer of La(O,F)BiSSe.

La(O,F)BiS_{2- x} Se _x is a layered material that is considered to be a candidate exotic superconductor as well as a promising thermoelectrical material. We performed soft X-ray photoelectron holography to study the Se incorporation site and the local atomic arrangement of the conducting layer. A comparison of the experimental holograms with the simulated holograms indicates that Se atoms preferentially occupy the S sites in the conducting Bi–S plane of La(O,F)BiS₂. A comparison between the state-of-the-art holographic reconstructions of La(O,F)BiSSe and La(O,F)BiS₂ suggests that Se substitution suppresses the displacement of S atoms in La(O,F)BiS₂. These results provide photoelectron holographic evidence for the Se incorporation site and the Se-induced suppression of in-plane disorder. [ABSTRACT FROM AUTHOR]