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Nitride Wide-Bandgap Semiconductors for UV Nonlinear Optics.

Authors :
Li, Shihang
Kang, Lei
Source :
Crystals (2073-4352); Nov2023, Vol. 13 Issue 11, p1536, 12p
Publication Year :
2023

Abstract

Nitride wide-bandgap semiconductors possess a wide tunable energy bandgap and abundant coordination anionic groups. This suggests their potential to display nonlinear optical (NLO) properties in the UV wavelength spectrum. This paper reports recent progress and material discoveries in exploring UV NLO structures using nitrides. The study emphasizes their underlying structure–property correlations in order to provide a summary of the potential performance and application value of important nitride NLO crystals. Additionally, the text underscores the benefits of nitrides in terms of optical transparency, second-harmonic-generation effects, and the birefringent phase matching output wavelength limits, while addressing current issues in terms of theoretical outlook and experimental exploration. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20734352
Volume :
13
Issue :
11
Database :
Complementary Index
Journal :
Crystals (2073-4352)
Publication Type :
Academic Journal
Accession number :
173827720
Full Text :
https://doi.org/10.3390/cryst13111536