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The Effect of Chemical Environment and Temperature on the Domain Structure of Free-Standing BaTiO3 via In Situ STEM.

Authors :
O'Reilly, Tamsin
Holsgrove, Kristina M.
Xinqiao Zhang
Scott, John J. R.
Gaponenko, Iaro
Kumar, Praveen
Agar, Joshua
Paruch, Patrycja
Arredondo, Miryam
Source :
Advanced Science; 10/17/2023, Vol. 10 Issue 29, p1-10, 10p
Publication Year :
2023

Abstract

Ferroelectrics, due to their polar nature and reversible switching, can be used to dynamically control surface chemistry for catalysis, chemical switching, and other applications such as water splitting. However, this is a complex phenomenon where ferroelectric domain orientation and switching are intimately linked to surface charges. In this work, the temperature-induced domain behavior of ferroelectric-ferroelastic domains in free-standing BaTiO<subscript>3</subscript> films under different gas environments, including vacuum and oxygen-rich, is studied by in situ scanning transmission electron microscopy (STEM). An automated pathway to statistically disentangle and detect domain structure transformations using deep autoencoders, providing a pathway towards real-time analysis is also established. These results show a clear difference in the temperature at which phase transition occurs and the domain behavior between various environments, with a peculiar domain reconfiguration at low temperatures, from a-c to a-a at ≈60 °C. The vacuum environment exhibits a rich domain structure, while under the oxidizing environment, the domain structure is largely suppressed. The direct visualization provided by in situ gas and heating STEM allows to investigate the influence of external variables such as gas, pressure, and temperature, on oxide surfaces in a dynamic manner, providing invaluable insights into the intricate surface-screening mechanisms in ferroelectrics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
21983844
Volume :
10
Issue :
29
Database :
Complementary Index
Journal :
Advanced Science
Publication Type :
Academic Journal
Accession number :
173775372
Full Text :
https://doi.org/10.1002/advs.202303028