Storage Cell with Analog-to-Digital Conversion for Focal Plane Arrays of the Long-Wave IR Range.

Variants of the circuitry of storage cells with analog-to-digital conversion in focal plane arrays (FPAs) of the long-wavelength IR range are considered. The necessity of a multiple increase in the charge capacity of the storage cell to improve the threshold characteristics of the FPA is substantiated. A new version of the storage cell with analog-to-digital conversion, which has several advantages in comparison with analogues (high linearity, low consumption, and low noise) is proposed. The results of the study of a test crystal of a CMOS integrated readout circuit manufactured using the HCMOS8D technology of Mikron JSC with a design standard of 0.18 micrometers are presented. [ABSTRACT FROM AUTHOR]