Comparison of V-I characteristics between MOSFET and MESFET by varying the substrate thickness.

The aim of the project is to improve the drain characteristics of a novel Metal Semiconductor Field Effect Transistor (MESFET) by reducing the size using nanotechnology and compared with Metal Oxide Semiconductor Field Effect Transistor (MOSFETThe MOSFET and MESFET were chosen as two groups having 21 samples each respectively. The drain characteristics were simulated by varying the substrate thickness in a MESFET. Reducing the source region length of a MESFET will lead to reducing the size of the device. The G power analysis is used for determining the sample size which contains two different groups, alpha (0.05), power (80 %) and enrollment ratio. The independent t-test was done which reveals that the MESFET (p <0.05) was found to be statistically significant compared with MOSFET. The analysis found that MESFET (0.00235 A) has significantly better drain characteristics compared to MOSFET (0.00131 A). [ABSTRACT FROM AUTHOR]