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Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces.
Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces.
- Source :
- Applied Physics Letters; 11/6/2023, Vol. 123 Issue 19, p1-6, 6p
- Publication Year :
- 2023
-
Abstract
- We probe the conduction-band offsets (CBOs) and confined states at GaAs/GaAsNBi quantum wells (QWs). Using a combination of capacitance–voltage (C–V) measurements and self-consistent Schrödinger–Poisson simulations based on the effective mass approximation, we identify an N-fraction dependent increase in CBO, consistent with trends predicted by the band anti-crossing model. Using the computed confined electron states in conjunction with photoluminescence spectroscopy data, we show that N mainly influences the conduction band and confined electron states, with a relatively small effect on the valence band and confined hole states in the quaternary QWs. This work provides important insight toward tailoring CBO and confined electron energies, both needed for optimizing infrared optoelectronic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 123
- Issue :
- 19
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 173553926
- Full Text :
- https://doi.org/10.1063/5.0172295