ESTIMATION OF ELECTRON DENSITY, TEMPERATURE AND ELECTRICAL CHARACTERIZATION OF SILICA SEEDED ARC PLASMA AT ATMOSPHERIC PRESSURE.

Plasma technology stands at the forefront of numerous industrial applications, offering versatile solutions from materials processing to aerospace engineering. This study employs a single Langmuir probe technique operating at atmospheric pressure to scrutinize the transformative impact of silica seeding on low-temperature arc plasma. The investigation unveils a dynamic interplay of electrons and ions within the plasma, unveiling key electrical properties. The I–V electrical properties of the arcs plasma before seeding, having a floating voltage of –39 V, demonstrate electron and ion currents for varied probe voltages. The electrons’ density is calculated to be 2.11 × 10¹³ m^–3, and the electrons’ temperature is at 6.25 eV. The I–V characteristics show a floating potential of about –35 V and –37 V after seeding an arc plasma using silica in the presence of aluminum oxide (2 % by weight) powder and grain, respectively. After seeding, it is discovered that the electron temperature falls to 1.18 eV for powder while 1.16 eV for grain and electron density rises to 2 × 10¹⁶ m^–3 for powder and 1.84 × 10¹⁶ m^–3 for grain. In addition, a notable fall in electron temperature and a discernible rise in electron density are seen. This non-equilibrium behavior is related to silica’s catalytic function, which is enhanced by the presence of aluminum oxide. Additionally, increased ionizing activity brought on by inelastic electron collisions causes the electron temperatures in the silica-seeded arcs plasma to rise with discharge voltage. These findings can be essential for enhancing plasma-based technologies in a variety of industrial applications because they provide insightful information on how silica seeding affects arc plasma properties. [ABSTRACT FROM AUTHOR]