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Tuning mid-infrared polarization sensitive reflectivity in GaN/AlGaN heterostructures.
- Source :
- EPJ Web of Conferences; 10/18/2023, Vol. 287, p1-2, 2p
- Publication Year :
- 2023
-
Abstract
- We present narrow-band polarization-sensitive reflectance of GaN/AlGaN heterostructures in the mid-infrared range. Experimental measurements performed at 15° angle of incidence show the excitation of a Berreman mode at the interface between GaN and sapphire substrate. A transfer matrix method for anisotropic layers has been used to analyze the obtained results. The contribution of the two-dimensional electron gas at the interfaces of the heterostructures has been included by proper modelization of an effective thin layer. [ABSTRACT FROM AUTHOR]
- Subjects :
- PHYSICS research
PHYSICAL optics
OPTICAL polarization
HETEROSTRUCTURES
SAPPHIRES
Subjects
Details
- Language :
- English
- ISSN :
- 21016275
- Volume :
- 287
- Database :
- Complementary Index
- Journal :
- EPJ Web of Conferences
- Publication Type :
- Conference
- Accession number :
- 173325167
- Full Text :
- https://doi.org/10.1051/epjconf/202328714002