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Thermal transport across TiO2–H2O interface involving water dissociation: Ab initio-assisted deep potential molecular dynamics.

Authors :
Li, Zhiqiang
Wang, Jian
Yang, Chao
Liu, Linhua
Yang, Jia-Yue
Source :
Journal of Chemical Physics; 10/14/2023, Vol. 159 Issue 14, p1-10, 10p
Publication Year :
2023

Abstract

Water dissociation on TiO<subscript>2</subscript> surfaces has been known for decades and holds great potential in various applications, many of which require a proper understanding of thermal transport across the TiO<subscript>2</subscript>–H<subscript>2</subscript>O interface. Molecular dynamics (MD) simulations play an important role in characterizing complex systems' interfacial thermal transport properties. Nevertheless, due to the imprecision of empirical force field potentials, the interfacial thermal transport mechanism involving water dissociation remains to be determined. To cope with this, a deep potential (DP) model is formulated through the utilization of ab initio datasets. This model successfully simulates interfacial thermal transport accompanied by water dissociation on the TiO<subscript>2</subscript> surfaces. The trained DP achieves a total energy accuracy of ∼238.8 meV and a force accuracy of ∼197.05 meV/Å. The DPMD simulations show that water dissociation induces the formation of hydrogen bonding networks and molecular bridges. Structural modifications further affect interfacial thermal transport. The interfacial thermal conductance estimated by DP is ∼8.54 × 10<superscript>9</superscript> W/m<superscript>2</superscript> K, smaller than ∼13.17 × 10<superscript>9</superscript> W/m<superscript>2</superscript> K by empirical potentials. The vibrational density of states (VDOS) quantifies the differences between the DP model and empirical potentials. Notably, the VDOS disparity between the adsorbed hydrogen atoms and normal hydrogen atoms demonstrates the influence of water dissociation on heat transfer processes. This work aims to understand the effect of water dissociation on thermal transport at the TiO<subscript>2</subscript>–H<subscript>2</subscript>O interface. The findings will provide valuable guidance for the thermal management of photocatalytic devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00219606
Volume :
159
Issue :
14
Database :
Complementary Index
Journal :
Journal of Chemical Physics
Publication Type :
Academic Journal
Accession number :
172990029
Full Text :
https://doi.org/10.1063/5.0167238