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Study on High-Efficiency Double Perovskite/Silicon Heterojunction Tandem Cells with Sb-Doped Cs2AgBiBr6.

Authors :
Wang, Yuerong
Tian, Hanmin
Zhang, Dengqi
Liu, Weilong
Ma, Xulei
Wang, Jiwei
Source :
Journal of Electronic Materials; Nov2023, Vol. 52 Issue 11, p7728-7739, 12p
Publication Year :
2023

Abstract

In this work, we use Silvaco ATLAS simulation software to design and study the optimal scale of the Cs<subscript>2</subscript>AgBiBr<subscript>6</subscript> double perovskite/silicon heterojunction tandem structure under ideal conditions, with theoretical efficiency of 27.25% in numerical simulation, and when Cs<subscript>2</subscript>AgBi<subscript>0.75</subscript>Sb<subscript>0.25</subscript>Br<subscript>6</subscript> is used as the top cell, the theoretical efficiency increases to 37.14%, which is higher than the efficiency of each sub-cell. The lead-free double perovskite has advantages including stable structure, adjustable bandgap, and non-polluting nature, and thus has great photovoltaic application potential. Density functional theory calculations were performed using CASTEP to study the crystal structure and electronic properties of the mixed halide Cs<subscript>2</subscript>AgBi<subscript>1−x</subscript>Sb<subscript>x</subscript>Br<subscript>6</subscript> (x = 0, 0.25). The study shows that Sb-doped Cs<subscript>2</subscript>AgBi<subscript>0.75</subscript>Sb<subscript>0.25</subscript>Br<subscript>6</subscript> with a bandgap of 1.8 eV is more suitable for the top cell than Cs<subscript>2</subscript>AgBiBr<subscript>6</subscript> with a bandgap of 2.05 eV, which realizes a more suitable absorption spectral distribution, current matching, and correspondingly higher efficiency, with a theoretical efficiency significantly higher than that of current mainstream perovskite tandem cells. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03615235
Volume :
52
Issue :
11
Database :
Complementary Index
Journal :
Journal of Electronic Materials
Publication Type :
Academic Journal
Accession number :
172843620
Full Text :
https://doi.org/10.1007/s11664-023-10692-4