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Mask-free photolithographic exposure using a matrix-addressable micropixellated AlInGaN ultraviolet light-emitting diode.

Authors :
Jeon, C. W.
Gu, E.
Dawson, M. D.
Source :
Applied Physics Letters; 5/30/2005, Vol. 86 Issue 22, p221105, 3p, 1 Diagram, 2 Graphs
Publication Year :
2005

Abstract

We report the integration of a UV-curable polymer microlens array onto a matrix-addressable, 368-nm-wavelength, light-emitting diode device containing 64×64 micropixel elements. The geometrical and optical parameters of the microlenses were carefully chosen to allow the highly divergent emission from each micropixel to be collimated into a narrow beam of about 8-μm diam, over a distance of more than 500 μm. This device is demonstrated as a photolithographic exposure tool, where the pattern-programmable array plays the role both of light source and photomask. A simple pattern comprised of two disks having 16-μm diam and 30-μm spacing was transferred into an i-line photoresist. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
86
Issue :
22
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
17249935
Full Text :
https://doi.org/10.1063/1.1942636