Strain-mediated voltage controlled magnetic anisotropy based switching for magnetic memory applications.

Reliability and packing density concerns are the two major shortcomings of spin transfer torque and spin orbit torque based magnetic memory, respectively. Voltage controlled magnetic anisotropy (VCMA) becomes energy efficient and fast, showing transcendence for the writing mechanism in the magnetic tunnel junction. Deterministic switching cannot be achieved by VCMA alone in the out of plane nanomagnet. It requires an external in-plane magnetic field, but the use of an external field is inconvenient for on-chip applications. We exploit stress and exchange bias provided by an antiferromagnetic material to mitigate the external magnetic field requisite. We perform macro-spin simulations using the Landau–Lifshitz–Gilbert equation at room temperature. We use the VCMA effect cum stress effect to investigate field free switching performance, and this improves the write error rate (WER) to 5 × 10 − 5 against WER of 0.1 with the VCMA effect alone. We studied the effects of applied voltage (amplitude and pulse width), exchange bias field, and VCMA coefficient on the switching performance in detail. This proposed two-terminal device can be helpful in achieving high cell density to implement nonvolatile magnetic memory. [ABSTRACT FROM AUTHOR]