Electron-Beam Radiation Effects in Multilayer Structures Grown with the Periodical Deposition of Si and CaF 2 on Si(111) †.

The formation of CaSi₂ films on Si(111) with the molecular-beam epitaxy (MBE) of CaF₂ under fast electron-beam irradiation was investigated. The method of a high-planarity CaSi₂ film synthesis assisted by electron-beam irradiation was developed. We combined two approaches to reduce the film roughness: the post-growth electron irradiation and codeposition of additional Si during CaF₂ growth. The application of the solid-phase epitaxy technique at the initial stage of film growth allowed for us to reduce surface roughness down to 1–2 nm. [ABSTRACT FROM AUTHOR]