Cite
Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs.
MLA
Li, Xuefeng, et al. “Influence of Trap-Assisted and Intrinsic Auger–Meitner Recombination on Efficiency Droop in Green InGaN/GaN LEDs.” Applied Physics Letters, vol. 123, no. 11, Sept. 2023, pp. 1–6. EBSCOhost, https://doi.org/10.1063/5.0167430.
APA
Li, X., DeJong, E., Armitage, R., Armstrong, A. M., & Feezell, D. (2023). Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs. Applied Physics Letters, 123(11), 1–6. https://doi.org/10.1063/5.0167430
Chicago
Li, Xuefeng, Elizabeth DeJong, Rob Armitage, Andrew M. Armstrong, and Daniel Feezell. 2023. “Influence of Trap-Assisted and Intrinsic Auger–Meitner Recombination on Efficiency Droop in Green InGaN/GaN LEDs.” Applied Physics Letters 123 (11): 1–6. doi:10.1063/5.0167430.