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Unveiling the influence of ferromagnetic Gd-doped ZnO films on the performance of organic solar cells.

Authors :
Che Ani, Norhidayah
Sahdan, Mohd Zainizan
Wibowo, Kusnanto Mukti
Nayan, Nafarizal
Adriyanto, Feri
Source :
Journal of Applied Physics; 9/14/2023, Vol. 134 Issue 10, p1-9, 9p
Publication Year :
2023

Abstract

Organic solar cells (OSCs) have emerged as a promising technology for renewable energy generation due to their low cost, lightweight, flexibility, and compatibility with roll-to-roll manufacturing. However, OSCs still face challenges in achieving high power conversion efficiency (PCE) due to various factors, including recombination loss. In this study, we investigated the effect of introducing a layer of eight atomic percent gadolinium-doped zinc oxide (Zn<subscript>0.92</subscript>Gd<subscript>0.08</subscript>O) between the poly(3-hexylthiophene) (P3HT): [6,6]-phenyl butyric acid methyl ester (PCBM) active layer and the fluorine-doped tin oxide (FTO) electrode of the OSC. The reference cell, which has an Au/P3HT:PCBM/ZnO/FTO structure, exhibits a PCE of 0.52%. Remarkably, when the Zn<subscript>0.92</subscript>Gd<subscript>0.08</subscript>O layer was inserted (Au/P3HT:PCBM/Zn<subscript>0.92</subscript>Gd<subscript>0.08</subscript>O/FTO), the PCE increased significantly to 3.42%, which is more than six times the increase. Through further analysis, we present that the insertion of the Zn<subscript>0.92</subscript>Gd<subscript>0.08</subscript>O layer induces spin polarization in the P3HT:PCBM layer, leading to enhanced charge transport and reducing the recombination rate. Based on the findings, it can be concluded that the Zn<subscript>0.92</subscript>Gd<subscript>0.08</subscript>O film can potentially improve OSC performance. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
134
Issue :
10
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
171961759
Full Text :
https://doi.org/10.1063/5.0157197