Preparation and full-spectrum broad-spectrum degradation properties of BiVO4 (010) crystalline plane S-type indirect heterojunctions.

By using the photo-deposition technique, the Ag was selectively reduced to Ag particles that were subsequently deposited on the BiVO⁺₄(010) facet. Subsequently, the electropositive g-C₃N₄ was deposited on the BiVO₄(010) facet. The band bending of the interface brought on by the polarization charge and the integrated electric field worked in concert to create the BiVO₄(010)–Ag–g-C₃N₄ crystalline plane S-type heterojunction. As a result, carriers live longer, e⁻–h pair recombination is successfully prevented, and the heterojunction’s redox capability has enhanced. After 150 min irradiation under Vis/NIR light, the degradation rate of 20 mg/L TC by crystalline S-type heterojunctions reaches 78.79%/53.70%, respectively, and the degradation rates of heterojunction on CIP, phenol, BHA, and coumarin reach 54.96%/39.47%, 33.43%/24.79%, 35.29%/20.14%, and 40.13%/22.97%, respectively. The polarization charge of Ag is used to modulate Fermi level of BiVO⁺₄ and g-C₃N₄ semiconductors to form crystalline S-type heterojunctions on the BiVO₄ (010) crystalline surface to enhance the redox capability and broad-spectrum degradation of photocatalysts in the full spectral range. [ABSTRACT FROM AUTHOR]