Exploration and mitigation of protrusion behavior in Ga-ion doped h-BN memristors.

Using hexagonal boron nitride (h-BN) to prepare resistive switching devices is a promising strategy. Various doping methods have aroused great interest in the semiconductor field in recent years, but many researchers have overlooked the various repetitive anomalies that occur during the testing process. In this study, the basic electrical properties and additive protrusion behavior of Ga-ion-doped h-BN memristors at micro–nanoscale during the voltage scanning process are investigated via AFM and energy dispersive spectroscopy. The additive protrusion behavior is subjected to exploratory research, and it is concluded that it is caused by anodic oxidation. An approach is proposed that involves filling the AFM chamber with nitrogen gas to improve the stability of memristor testing, and this method provides a solution for enhanced testing stability of memristors. HIGHLIGHTS: • Gives insights into the electrical properties of Ga-ion-doped h-BN memristors at micro–nanoscale via AFM. • Investigates and solves the issue of protrusion behavior in electrical measurements of Ga-ion-doped h-BN. [ABSTRACT FROM AUTHOR]