Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β-Ga2O3.

In this work, we have investigated plasma-assisted deposition of Al₂O₃ on HVPE (001) β-Ga₂O₃ and evaluated the dielectric quality from electrical measurements on fabricated metal-oxide-semiconductor (MOS) capacitors. The interface structure and crystallinity of the films were investigated as a function of the growth temperature. The dielectric/semiconductor interfaces were found to have reverse breakdown electric fields up to 5.3 MV/cm in the β-Ga₂O₃, with relatively low hysteresis in capacitance–voltage and low leakage current. We determined a negative fixed interface charge density at the interface from analysis of thickness-dependent capacitance voltage data. This study shows the advantage of using plasma-assisted deposition to achieve high breakdown strength Al₂O₃/β-Ga₂O₃ MOS structures for device application purposes. [ABSTRACT FROM AUTHOR]