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Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance.

Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance.

Authors :
Ryu, Seung Ho
Jeon, Jihoon
Park, Gwang Min
Kim, Taikyu
Eom, Taeyong
Chung, Taek-Mo
Baek, In-Hwan
Kim, Seong Keun
Source :
Applied Physics Letters; 8/14/2023, Vol. 123 Issue 7, p1-6, 6p
Publication Year :
2023

Abstract

Despite its relatively high hole mobility, the electrical performance of p-type SnO thin-film transistors (TFTs) lags behind that of n-type oxide TFTs. In this study, we present an approach to enhance the performance of p-type SnO TFTs by utilizing an atomic-layer-deposited SnO/high-k structure, with crystalline HfO<subscript>2</subscript> (c-HfO<subscript>2</subscript>) serving as a high-k dielectric. However, the grain boundaries on the c-HfO<subscript>2</subscript> surface influenced the microstructure and orientation of the SnO layer, resulting in a random orientation and surface roughening. To address this issue, we modified the c-HfO<subscript>2</subscript> surface with an amorphous ultrathin Al<subscript>2</subscript>O<subscript>3</subscript> layer to eliminate the grain boundaries on the deposition surface. This enabled the alignment of the (00l) SnO planes parallel to the substrate surface and provided a smooth surface. Moreover, the introduction of ultrathin Al<subscript>2</subscript>O<subscript>3</subscript> into SnO/high-k stacks substantially improved the electrical performance of p-type SnO TFTs. Our findings highlight the potential of integrating van der Waals semiconductors with high-k dielectrics, facilitating opportunities for advanced device applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
123
Issue :
7
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
170021834
Full Text :
https://doi.org/10.1063/5.0164727