Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer.

MLA

Liu, Yongkai, et al. “Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer.” Advanced Electronic Materials, vol. 9, no. 8, Aug. 2023, pp. 1–6. EBSCOhost, https://doi.org/10.1002/aelm.202300208.

APA

Liu, Y., Wang, T., Li, Z., Yu, J., Meng, J., Xu, K., Liu, P., Zhu, H., Sun, Q., Zhang, D. W., & Chen, L. (2023). Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer. Advanced Electronic Materials, 9(8), 1–6. https://doi.org/10.1002/aelm.202300208

Chicago

Liu, Yongkai, Tianyu Wang, Zhenhai Li, Jiajie Yu, Jialin Meng, Kangli Xu, Pei Liu, et al. 2023. “Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer.” Advanced Electronic Materials 9 (8): 1–6. doi:10.1002/aelm.202300208.