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Demonstration of a 4.32 μm cutoff InAsSbBi nBn photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing.
- Source :
- Applied Physics Letters; 7/31/2023, Vol. 123 Issue 5, p1-5, 5p
- Publication Year :
- 2023
-
Abstract
- InAsSbBi nBn photodetectors are demonstrated that are lattice-matched to the underlying GaSb substrate with a 4.32 μm wavelength cutoff at 150 K that is 0.3 μm longer than that of lattice-matched InAsSb at this temperature reflecting a 0.5% Bi mole fraction in the InAsSbBi active region. A low growth temperature was utilized to facilitate the incorporation of Bi, resulting in a minority carrier lifetime on the order of 24 ns in the InAsSbBi active region. Nevertheless, the detectors exhibit a quantum efficiency of 17% at 3.3 μm wavelength with a dark current density of 50 μA/cm<superscript>2</superscript> at 150 K and −0.4 V bias and the strong photoresponse turn-on characteristic of a random alloy at 4.32 μm wavelength and 150 K. A shot noise-equivalent irradiance analysis indicates that this detectors' dark-current-limited noise-equivalent irradiance of 10<superscript>12</superscript> cm<superscript>−2</superscript> s<superscript>−1</superscript> is two orders of magnitude greater than the Rule 07 expectation for this cutoff, and dark-current-limited shot noise-equivalent irradiance performance transitions to photon-limited at 1.7 × 10<superscript>15</superscript> photons/cm<superscript>2</superscript> s. [ABSTRACT FROM AUTHOR]
- Subjects :
- PHOTODETECTORS
QUANTUM efficiency
MOLE fraction
ALLOYS
LOW temperatures
SHOT peening
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 123
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 169786951
- Full Text :
- https://doi.org/10.1063/5.0161051