Back to Search Start Over

Dielectric properties and ferroelectric resistive switching mechanism in the epitaxial (111) BiFeO3 films.

Authors :
Wei, Yi
Liu, Zhuo
Xu, Dianguo
Dong, Lei
Li, Gang
Wang, Yunming
Fan, Feng
Meng, Xudong
Song, Jianmin
Source :
Ferroelectrics; 2023, Vol. 613 Issue 1, p97-103, 7p
Publication Year :
2023

Abstract

Resistive random access memory is promising for next-generation nonvolatile memory, which has high memory density, low power consumption, and fast read/write speed. However, the resistive switching (RS) mechanism in oxide ferroelectric thin film devices is still unclear. In this paper, Pt/BiFeO<subscript>3</subscript>/La<subscript>0.5</subscript>Sr<subscript>0.5</subscript>CoO<subscript>3</subscript>(Pt/BFO/LSCO) heterostructures were deposited on (111)SrTiO<subscript>3</subscript>(STO) substrates by magnetron sputtering. X-ray diffraction confirmed the epitaxial relationship between (111)BFO//(111)LSCO//(111)STO. Atomic force microscopy (AFM) showed that (111)BFO had an island structure with uniform grain distribution. The Pt/(111)BFO/(111)LSCO heterostructures exhibit obvious ferroelectricity and RS effects. The results of C-V analysis and I-V fitting indicate that the RS is caused by the space-charge-limited conduction mechanism. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00150193
Volume :
613
Issue :
1
Database :
Complementary Index
Journal :
Ferroelectrics
Publication Type :
Academic Journal
Accession number :
169784753
Full Text :
https://doi.org/10.1080/00150193.2023.2215502