LaGe2 Thin Films Designed as Band Filters for 6G Communication Technology.

Herein, LaGe₂ thin films with thickness of 150 nm are grown on thin layers of indium by the thermal evaporation technique under a vacuum pressure of 10⁻⁵ mbar. The films are structurally, morphologically, compositionally and electrically characterized. It is observed that thin films of LaGe₂ are polycrystalline in nature, comprising slightly excess germanium in their structure. To establish their applicability in communication technology, two In/LaGe₂/Ag and In/LaGe₂/C electrical channels are formed. Both of the channels performed as negative resistance and capacitance sources. The channels exhibited microwave cutoff frequency exceeding 200 GHz. The resonance in the In/LaGe₂/Ag and In/LaGe₂/C channels dominates at driving frequencies of 1.21 GHz and 1.42 GHz, respectively. The measured impedance, magnitude of reflection coefficient ( S 11 parameter), return loss and voltage standing wave ratio spectra confirmed the suitability of the LaGe₂ thin films for wireless 6G communication technology. [ABSTRACT FROM AUTHOR]