N-channel Mosfets improved 220pc over pure silicon transistors as III-V HBTs hit 604GHz.

This article presents information related to N-Channel Mosfets. Researchers in Great Britain have dramatically enhanced the performance of n-channel Mosfets processed at CMOS-compatible temperatures. On-state drain current and maximum transconductance in the devices, which were built on a strained-Si-SiGe virtual substrate on a silicon wafer, were increased by up to 220 per cent over pure silicon control transistors. The researchers, at Southampton silicon technology specialist Innos and the University of Newcastle, varied the composition of the SiGe alloy and obtained best performance from a device with a 300nm channel length built on a relaxed S0.