Ga 2 O 3 /Ag/Ga 2 O 3 -Laminated Film Fabricated at Room Temperature: Toward Applications in Ultraviolet Transparent Highly Conductive Electrodes.

Ga₂O₃/Ag/Ga₂O₃-laminated films with high electrical conductivity and ultraviolet (UV) transparency were achieved by radio frequency magnetron sputtering at room temperature (RT) on quartz glass. The influence of annealing temperature and ambient on the structural, electrical and optical properties of Ga₂O₃/Ag/Ga₂O₃-laminated films were investigated in detail. As the annealing temperature increases, the optical bandgap of the Ga₂O₃-laminated films widens. The Ga₂O₃/Ag/Ga₂O₃-laminated films exhibited good photoelectric performance with a figure-of-merit (FOM) value of 5.83 × 10⁻³ Ω⁻¹, a sheet resistance of 12.55 Ω/sq, a transmittance of 95.15% at 325 nm, and an average transmittance of 77.56% (250~300 nm). All these results suggest that RT-fabricated Ga₂O₃/Ag/Ga₂O₃-laminated films show great potential in UV transparent conductive electrodes for UV optoelectronic devices and in flexible electronics. [ABSTRACT FROM AUTHOR]